2SB1386PT c h e n m k o e n t e r p r i s e c o . , l t d s m a l l f l a t pnp epitaxial transistor v o l t a g e 20 v o l t s c u r r e n t 5 a m p e r es a p p l i c a t i o n f e a t u r e * s m a l l f l a t p a c k a g e . ( s c - 6 2 / s o t - 8 9 ) * l o w s a t u r a t i o n v o l t a g e v c e ( s a t ) =-0.35v(typ.)(i c /i b =-4a/-0.1a) * p o w e r d r i v e r a n d s t r o b e f l a s h . 2004-11 * pc= 2.0w (mounted on ceramic substrate). * high saturation current capability. c i r c u i t marking * hfe classification p : p86 q : q86 n o t e 1 . t r a n s i s t o r m o u n t e d o n c e r a m i c s u b s t r a t e b y 4 0 m m x 4 0 m m x 0 . 7 m m . d i m e n s i o n s i n m i l l i m e t e r s s c - 6 2 / s o t - 8 9 s c - 6 2 / s o t - 8 9 t h e r m a l c h a r a c t e r i s t i c s ( a t t a = 2 5 o c u n l e s s o t h e r w i s e n o t e d ) n o t e s : c h a r a c t e r i s t i c s c o n d i t i o n s y m b o l u n i t s 3 5 7 o c / w t h e r m a l r e s i s t a n c e ( j u n c t i o n t o a m b i e n t ) n o t e 1 m a x i m u m r a t i n g e s ( a t t a = 2 5 o c u n l e s s o t h e r w i s e n o t e d ) ratings condition collector - base voltage collector - emitter voltage emitter - base voltage open emitter open base open collector collector current dc peak collector current total power dissipation t a 25 o c; note 1 storage temperature junction temperature operating ambient temperature symbol v cbo v ceo v ebo r j a t amb t j t stg i cm i c 2SB1386PT units -30 volts volts volts amps amps w o c o c o c -20 -6 -5 -10 2.0 -55 to +150 +150 -55 to +150 v a l u e p tot 1 . t r a n s i s t o r m o u n t e d o n a n f r 4 p r i n t e d - c i r c u i t b o a r d 1 . 6 " x 1 . 6 " x 0 . 0 6 " . 2 . m e a s u r e d a t p u l s e w i d t h 3 0 0 u s , d u t y c y c l e 2 % . 1 . 7 m a x . 4 . 6 m a x . 4 . 6 m a x . 0 . 4 + 0 . 0 5 1 . 6 m a x . 2 . 5 + 0 . 1 0 . 8 m i n . + 0 . 0 8 0 . 4 5 - 0 . 0 5 + 0 . 0 8 0 . 4 0 - 0 . 0 5 1 . 5 0 + 0 . 1 + 0 . 0 8 0 . 4 0 - 0 . 0 5 1 . 5 0 + 0 . 1 1 2 3 1 b a s e 2 collector ( heat sink ) 3 emitter r: r86 3 2 1 e c b
r a t i n g c h a r a c t e r i s t i c c u r v e s ( 2 sb1386pt ) c h a r a c t e r i s t i c s ( a t t a = 2 5 o c u n l e s s o t h e r w i s e n o t e d ) parameters condition collector-base breakdown voltage collector-emitter breakdown voltage dc current gain i c =-50ua i c =-1ma v ce =-2v; note 1 i c =-0.5a collector-emitter saturation voltage i c =-4a; i b =-0.1a i e =ie=0; v cb =-20v; f=1mhz i e =-0.05a; v ce =-6.0v; f=100mhz output capacitance transition frequency symbol bv cbo h fe c c f t v cesat min. max. type units -30 volts volts pf mhz - -20 82 390 - - -1.0 -0.35 - - 60 - - 120 note : 1. hfe(2) classification p: 82 to 180, q: 120 to 270, r: 180 to 390. emitter-base breakdown voltage i e =-50ua -6 - collector cut-off current emitter cut-off current i e =0; v cb =-200v i c =0; v eb =-5v i cbo i ceo - -0.5 ua ua - - -0.5 - - - - - volts volts bv ceo bv ebo
r a t i n g c h a r a c t e r i s t i c c u r v e s ( 2SB1386PT ) -1m -2m -5m -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 collector current : ic (a) b a s e t o e m i t t e r v o l t a g e : v b e ( v ) f i g . 1 g r o u n d e d e m i t t e r p r o p a g a t i o n c h a r a c t e r i s t i c s v c e = - 2v 2 5 o c - 2 5 o c t a = 1 0 0 o c 0 -1 -2 -3 -4 -5 0 -0.4 -0.8 -1.2 -1.6 -2.0 t a = 2 5 o c -5ma -10ma -15ma -20ma -25ma -30ma -35ma -40ma i b 0 m a -45ma -50ma c o l l e c t o r c u r r e n t : i c ( a ) c o l l e c t o r t o e m i t t e r v o l t a g e : v c e ( v ) f i g . 2 g r o u n d e d e m i t t e r o u t p u t c h a r a c t e r i s t i c s -1m 5 1 0 2 0 5 0 1 0 0 2 0 0 5 0 0 1 0 0 0 2 0 0 0 5 0 0 0 -0.01 -0.1 -1 -10 t a = 2 5 o c -2v -1v v ce =-5v d c c u r r e n t g a i n : h f e c o l l e c t o r c u r r e n t : i c ( a ) f i g . 3 d c c u r r e n t g a i n v s . c o l l e c t o r c u r r e n t ( i ) -1m 5 1 0 2 0 5 0 1 0 0 2 0 0 5 0 0 1 0 0 0 2 0 0 0 5 0 0 0 -0.01 -0.1 - 1 -10 v c e = - 1v c e 2 5 o c - 2 5 o c t a = 1 0 0 o c d c c u r r e n t g a i n : h f e c o l l e c t o r c u r r e n t : i c ( a ) f i g . 4 d c c u r r e n t g a i n v s . c o l l e c t o r c u r r e n t ( i i ) -1m 5 1 0 2 0 5 0 1 0 0 2 0 0 5 0 0 1 0 0 0 2 0 0 0 5 0 0 0 -0.01 -0.1 -1 -10 v c e =- 2v 2 5 o c t a = 1 0 0 o c d c c u r r e n t g a i n : h f e c o l l e c t o r c u r r e n t : i ( a ) f i g . 5 d c c u r r e n t g a i n v s . c o l l e c t o r c u r r e n t ( i i i ) -0.01 -1 -10 -2m -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 collector saturation voltage : v ce(sat) (v) c o l l e c t o r c u r r e n t : i c ( a ) f i g . 6 c o l l e c t o r - e m i t t e r s a t u r a t i o n v o l t a g e v s . c o l l e c t o r c u r r e n t ( i ) t a = 2 5 o c -0.1 i c / i b = 5 0 3 0 1 0 4 0 -2m -0.01 -0.1 -1 -10 collector saturation voltage : v ce(sat) (v) c o l l e c t o r c u r r e n t : i c ( a ) f i g . 7 c o l l e c t o r - e m i t t e r s a t u r a t i o n v o l t a g e v s . c o l l e c t o r c u r r e n t ( i i ) f i g . 8 c o l l e c t o r - e m i t t e r s a t u r a t i o n v o l t a g e v s . c o l l e c t o r c u r r e n t ( i i i ) f i g . 9 c o l l e c t o r - e m i t t e r s a t u r a t i o n v o l t a g e v s . c o l l e c t o r c u r r e n t ( i v ) -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 i c / i b = 4 0 i c / i b = 1 0 i c / i b = 3 0 - 2 5 o c 2 5 o c t a = 1 0 0 o c - 2 5 o c 2 5 o c t a = 1 0 0 o c - 2 5 o c 2 5 o c t a = 1 0 0 o c - 2 5 o c -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -2m -0.01 -0.1 -1 -10 collector saturation voltage : v ce(sat) (v) c o l l e c t o r c u r r e n t : i c ( a ) c o l l e c t o r c u r r e n t : i c ( a )
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